| PART |
Description |
Maker |
| ZXMN3F318DN8 ZXMN3F318DN8TA |
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
|
Zetex Semiconductors
|
| ZXMN3F318DN8 |
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
|
Diodes
|
| ZXMN3G32DN8TA ZXMN3G32DN8 |
30V SO8 dual N-channel enhancement mode MOSFET
|
Diodes Incorporated
Zetex Semiconductors
|
| ZXMN3F31DN8TA ZXMN3F31DN8 |
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
30V SO8 dual N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| ZXMP3F37N8 ZXMP3F37N8TA |
30V SO8 P-channel enhancement mode MOSFET
|
Diodes
|
| ZXMP3F36N8TA |
30V SO8 P-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
| TISP1082 |
DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
|
POINN[Power Innovations Ltd]
|
| BSO604NS2 |
Low Voltage MOSFETs - Dual-SO8; 5 A; 55V; LL; 35 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| FDMS9620S |
Dual N-Channel PowerTrenchMOSFET Q1: 30V, 16A, 21.5mQ2: 30V, 18A, 13m
|
Fairchild Semiconductor Corporation
|
| EN8967A SBE81312 SBE813-TL-E EN8967 |
Schottky Barrier Diode, 30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode
30V, 3.0A Rectifier
|
ON Semiconductor
Sanyo Semicon Device
|
